SI6968BEDQ-T1-E3
MOSFET 2N-CH 20V 5.2A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI6968BEDQ-T1-E3 is a TrenchFET® series power MOSFET array featuring two N-channel, common drain configurations. This device offers a 20V drain-to-source voltage rating and a continuous drain current capability of 5.2A at 25°C. Key performance metrics include a low on-resistance of 22mOhm at 6.5A and 4.5V, and a logic level gate for enhanced drive flexibility. With a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C, this MOSFET is suitable for demanding applications. The 8-TSSOP package is supplied on tape and reel, facilitating high-volume surface mount assembly. This component finds utility in various power management solutions across industrial and automotive sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 5.2A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 22mOhm @ 6.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.6V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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