SI6967DQ-T1-E3
MOSFET 2P-CH 8V 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI6967DQ-T1-E3 is a 2 P-channel MOSFET array designed for high-efficiency power management applications. This device features a maximum drain-source voltage (Vdss) of 8V and a low on-resistance (Rds On) of 30mOhm at 5A and 4.5V Vgs, ensuring minimal conduction losses. The logic level gate enables direct drive from low-voltage microcontrollers. With a maximum power dissipation of 1.1W and a continuous drain current capability (though not specified, implied by Rds On), it is suitable for battery-powered devices and portable electronics. The 8-TSSOP package offers a compact footprint for surface mounting. Typical applications include load switching, battery charging circuits, and power sequencing in consumer electronics and industrial automation. The SI6967DQ-T1-E3 is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 40nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
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