SI6966EDQ-T1-GE3
MOSFET 2N-CH 20V 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI6966EDQ-T1-GE3 is a dual N-channel Power MOSFET array designed for efficient power management. This device features a 20V drain-source voltage (Vdss) and a low Rds(on) of 30mOhm at 5.2A and 4.5V Vgs, making it suitable for high-density power applications. The logic-level gate drive simplifies interfacing with low-voltage control signals. With a maximum power dissipation of 1.25W and an operating temperature range of -55°C to 150°C, the SI6966EDQ-T1-GE3 is engineered for reliability in demanding environments. Packaged in an 8-TSSOP (0.173", 4.40mm width) for surface mounting, this MOSFET array is commonly utilized in automotive, industrial, and consumer electronics sectors requiring compact and high-performance switching solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
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