SI6966EDQ-T1-E3
MOSFET 2N-CH 20V 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI6966EDQ-T1-E3 is a 20V dual N-channel MOSFET array housed in an 8-TSSOP package. This surface-mount device features logic-level gate operation, with a typical Rds(On) of 30mOhm at 5.2A and 4.5V Vgs. The maximum power dissipation is 1.25W, and it operates across a temperature range of -55°C to 150°C. Gate charge is specified at 25nC maximum at 4.5V Vgs, and the threshold voltage (Vgs(th)) is a maximum of 600mV at 250µA. This component is suitable for applications in consumer electronics, industrial automation, and power management. The device is supplied in a Tape & Reel (TR) package.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.25W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 5.2A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
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