SI6966DQ-T1-GE3
MOSFET 2N-CH 20V 4A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, Part Number SI6966DQ-T1-GE3, offers a dual N-channel configuration with a 20V Drain-to-Source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C. This surface mount device features a logic level gate and a low Rds(on) of 30mOhm at 4.5A and 4.5V. The package is an 8-TSSOP with a maximum power dissipation of 830mW. Key electrical characteristics include a gate charge (Qg) of 20nC maximum at 4.5V and a threshold voltage (Vgs(th)) of 1.4V maximum at 250µA. Operating temperature range is -55°C to 150°C. This component is suitable for applications in power management, consumer electronics, and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-TSSOP |