SI6966DQ-T1-E3
MOSFET 2N-CH 20V 4A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET array, part number SI6966DQ-T1-E3, offers a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C. This dual N-channel device features a low Rds(on) of 30mOhm at 4.5A and 4.5V, coupled with a logic-level gate for efficient drive. The Vishay Siliconix SI6966DQ-T1-E3 is housed in an 8-TSSOP package, suitable for surface mounting. Its low power dissipation of 830mW and operating temperature range of -55°C to 150°C make it ideal for applications in power management, consumer electronics, and industrial automation. The gate charge (Qg) is a maximum of 20nC at 4.5V.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-TSSOP |