SI6963BDQ-T1-GE3
MOSFET 2P-CH 20V 3.4A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI6963BDQ-T1-GE3 is a 2 P-Channel MOSFET array designed for efficient power switching applications. This device features a 20V drain-to-source voltage (Vdss) and supports a continuous drain current (Id) of 3.4A at 25°C. The low on-resistance (Rds On) of 45mOhm is achieved at 3.9A and 4.5V Vgs, with a logic level gate feature for enhanced drive flexibility.
The SI6963BDQ-T1-GE3 is packaged in an 8-TSSOP (0.173", 4.40mm Width) surface mount configuration, supplied on tape and reel (TR). Its maximum power dissipation is 830mW, and it operates within an ambient temperature range of -55°C to 150°C. This MOSFET array is suitable for use in automotive and industrial power management systems. Key electrical parameters include a gate charge (Qg) of 11nC maximum at 4.5V and a threshold voltage (Vgs(th)) of 1.4V maximum at 250µA.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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