SI6963BDQ-T1-E3
MOSFET 2P-CH 20V 3.4A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET Array, Part Number SI6963BDQ-T1-E3, is a dual P-channel MOSFET designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.4A at 25°C. The low on-resistance (Rds On) of 45mOhm at 3.9A and 4.5V Vgs, combined with a logic-level gate drive, makes it suitable for low-voltage battery-powered systems. The SI6963BDQ-T1-E3 is packaged in an 8-TSSOP for surface mounting and operates across a temperature range of -55°C to 150°C. Applications include power management, battery charging circuits, and load switching in consumer electronics and industrial automation. The component is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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