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SI6963BDQ-T1-E3

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SI6963BDQ-T1-E3

MOSFET 2P-CH 20V 3.4A 8TSSOP

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix MOSFET Array, Part Number SI6963BDQ-T1-E3, is a dual P-channel MOSFET designed for efficient power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 3.4A at 25°C. The low on-resistance (Rds On) of 45mOhm at 3.9A and 4.5V Vgs, combined with a logic-level gate drive, makes it suitable for low-voltage battery-powered systems. The SI6963BDQ-T1-E3 is packaged in an 8-TSSOP for surface mounting and operates across a temperature range of -55°C to 150°C. Applications include power management, battery charging circuits, and load switching in consumer electronics and industrial automation. The component is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-TSSOP (0.173"", 4.40mm Width)
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max830mW
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.4A
Input Capacitance (Ciss) (Max) @ Vds-
Rds On (Max) @ Id, Vgs45mOhm @ 3.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs11nC @ 4.5V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1.4V @ 250µA
Supplier Device Package8-TSSOP

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