SI6954ADQ-T1-BE3
MOSFET 2N-CH 30V 3.1A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI6954ADQ-T1-BE3. This is a dual N-channel MOSFET array featuring a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 3.1A at 25°C. The device offers a low on-resistance of 53mOhm at 3.4A and 10V, with a gate charge (Qg) of 16nC (max) at 10V. Power dissipation is rated at 830mW (Ta). The MOSFET array is housed in an 8-TSSOP package and supports surface mount technology. Operating temperature ranges from -55°C to 150°C. This component is commonly utilized in power management applications across various industries.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW (Ta) |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 53mOhm @ 3.4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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