SI6943BDQ-T1-GE3
MOSFET 2P-CH 12V 2.3A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI6943BDQ-T1-GE3 is a dual P-channel MOSFET array designed for efficient power switching. This device features a 12V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.3A at 25°C. The on-resistance (Rds On) is a maximum of 80mOhm at 2.5A and 4.5V, indicative of low conduction losses. Operating as a logic-level gate device, it simplifies drive requirements. The 8-TSSOP package, with a 4.40mm width, supports surface mounting and a maximum power dissipation of 800mW. Key parameters include a gate charge (Qg) of 10nC at 4.5V and a threshold voltage (Vgs(th)) of 800mV at 250µA. This component is suitable for applications in consumer electronics, industrial automation, and portable devices where compact and efficient power management is critical. It is supplied in a Tape & Reel (TR) package.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 8-TSSOP |