SI6943BDQ-T1-E3
MOSFET 2P-CH 12V 2.3A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI6943BDQ-T1-E3 is a dual P-channel power MOSFET array designed for efficient power management. This MOSFET array features a 12V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.3A at 25°C. The device exhibits a low on-resistance (Rds On) of 80mOhm maximum at 2.5A, 4.5V Vgs, and a threshold voltage (Vgs(th)) of 800mV maximum at 250µA. With a gate charge (Qg) of 10nC maximum at 4.5V Vgs, it is suitable for applications requiring fast switching. The SI6943BDQ-T1-E3 is housed in an 8-TSSOP package, a surface-mount device with a maximum power dissipation of 800mW. This component is commonly utilized in automotive, industrial, and consumer electronics applications. It operates across a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 2.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 800mV @ 250µA |
| Supplier Device Package | 8-TSSOP |
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