SI6933DQ-T1-E3
MOSFET 2P-CH 30V 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI6933DQ-T1-E3 is a dual P-channel power MOSFET in an 8-TSSOP package. This component features a 30V drain-to-source breakdown voltage and a low Rds(On) of 45mOhm maximum at 3.5A and 10V Vgs. The logic-level gate design facilitates operation with low-voltage control signals. With a maximum power dissipation of 1W and an operating temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics, industrial control, and battery management systems. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
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