SI6928DQ-T1-E3
MOSFET 2N-CH 30V 4A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI6928DQ-T1-E3 is a dual N-channel Power MOSFET designed for efficient power management. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 4A at 25°C, with a low on-resistance of 35mOhm at 4A, 10V. Optimized for logic-level gate drive, it exhibits a gate charge of 14nC at 5V. The MOSFET array is housed in a compact 8-TSSOP package, suitable for surface mounting and offering a power dissipation of 1W. Operating across a wide temperature range of -55°C to 150°C, the SI6928DQ-T1-E3 finds application in industries such as consumer electronics, industrial automation, and automotive systems requiring robust and efficient power switching. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 35mOhm @ 4A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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