SI6926ADQ-T1-GE3
MOSFET 2N-CH 20V 4.1A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET Array, SI6926ADQ-T1-GE3, offers a dual 2-channel configuration with a 20V drain-to-source voltage and 4.1A continuous drain current (Id) at 25°C. This surface mount device, packaged in an 8-TSSOP, features logic-level gate drive and a low Rds(on) of 30mOhm at 4.5A and 4.5V. With a maximum power dissipation of 830mW and a gate charge (Qg) of 10.5nC at 4.5V, it is suitable for applications requiring efficient switching. The operating temperature range is -55°C to 150°C. This component is commonly found in power management solutions and portable electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Digi-Reel®Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Digi-Reel® |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-TSSOP |