SI6926ADQ-T1-E3
MOSFET 2N-CH 20V 4.1A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI6926ADQ-T1-E3 is a dual N-channel Power MOSFET array in an 8-TSSOP package. This device offers a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 4.1A at 25°C. Featuring a logic-level gate, it achieves a low on-resistance (Rds On) of 30mOhm maximum at 4.5A and 4.5V Vgs. The Vishay Siliconix SI6926ADQ-T1-E3 has a maximum power dissipation of 830mW and a gate charge (Qg) of 10.5nC at 4.5V. Operating temperature range is -55°C to 150°C. This component is commonly utilized in power management, consumer electronics, and industrial applications. It is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 15 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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