SI6926ADQ-T1-BE3
MOSFET 2N-CH 20V 4.1A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix 2 N-Channel MOSFET array, part number SI6926ADQ-T1-BE3, offers a 20V drain-to-source voltage capability. This device features a continuous drain current of 4.1A at 25°C and a maximum power dissipation of 830mW. With a low on-resistance of 30mOhm at 4.5A and 4.5V, it is suitable for applications requiring efficient switching. The gate charge is specified at 10.5nC maximum at 4.5V. The component is housed in an 8-TSSOP package, designed for surface mounting. Operating temperature range is -55°C to 150°C. This MOSFET array is commonly utilized in consumer electronics and industrial automation. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW (Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10.5nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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