SI6925ADQ-T1-E3
MOSFET 2N-CH 20V 3.3A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI6925ADQ-T1-E3, a dual N-channel MOSFET array, features a 20V drain-source voltage and a continuous drain current of 3.3A at 25°C. This component is designed with a logic level gate, requiring a 4.5V gate-source voltage for optimal performance with a maximum Rds(On) of 45mOhm at 3.9A. The device exhibits a gate charge of 6nC at 4.5V and a threshold voltage of 1.8V at 250µA. With a maximum power dissipation of 800mW, it is housed in an 8-TSSOP package for surface mounting. Operating across a temperature range of -55°C to 150°C, the SI6925ADQ-T1-E3 is suitable for applications in consumer electronics and portable devices. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 800mW |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 3.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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