SI6924AEDQ-T1-GE3
MOSFET 2N-CH 28V 4.1A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix MOSFET Array, part number SI6924AEDQ-T1-GE3, features two N-channel MOSFETs in a common drain configuration within an 8-TSSOP package. This device offers a Vdss of 28V and a continuous drain current (Id) of 4.1A at 25°C. The Rds(On) is specified at a maximum of 33mOhm at 4.6A and 4.5V Vgs, indicating efficient power handling. With a logic-level gate feature and a Vgs(th) of 1.5V at 250µA, it is suitable for low-voltage drive applications. The device is rated for 1W maximum power dissipation and operates across a temperature range of -55°C to 150°C. This Vishay Siliconix MOSFET array is commonly utilized in power management and switching applications within the automotive, industrial, and consumer electronics sectors. It is supplied on tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) Common Drain |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 28V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 33mOhm @ 4.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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