SI6913DQ-T1-E3
MOSFET 2P-CH 12V 4.9A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI6913DQ-T1-E3, features a 2 P-channel configuration with a 12V drain-to-source voltage. This device offers a continuous drain current of 4.9A at 25°C, with a low Rds(on) of 21mOhm at 5.8A and 4.5V. The gate threshold voltage is a maximum of 900mV at 400µA, and it includes logic level gate drive capability. With a maximum power dissipation of 830mW, the SI6913DQ-T1-E3 is housed in an 8-TSSOP package, suitable for surface mounting. Key parameters include a gate charge (Qg) of 28nC at 4.5V and an operating temperature range of -55°C to 150°C. This component finds application in power management, battery charging circuits, and portable electronics. The device is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 5.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 900mV @ 400µA |
| Supplier Device Package | 8-TSSOP |
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