SI6913DQ-T1-BE3
MOSFET 2P-CH 12V 4.9A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI6913DQ-T1-BE3 is a 12V, 2 P-Channel MOSFET array in an 8-TSSOP package. This device features a maximum continuous drain current of 4.9A (Ta) and a low on-resistance of 21mOhm @ 5.8A, 4.5V. The maximum power dissipation is 830mW (Ta). With a gate charge of 28nC @ 4.5V, it is suitable for applications requiring efficient switching. The operating temperature range is -55°C to 150°C (TJ). This component is widely adopted in power management and consumer electronics for its performance and compact form factor. The SI6913DQ-T1-BE3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: unknownManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW (Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A (Ta) |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 21mOhm @ 5.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 900mV @ 400µA |
| Supplier Device Package | 8-TSSOP |
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