SI6562DQ-T1-GE3
MOSFET N/P-CH 20V 8-TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI6562DQ-T1-GE3 is an N/P-Channel MOSFET array designed for surface mount applications. This component features a 20V drain-to-source voltage rating and a maximum power dissipation of 1W. The device offers a low on-resistance of 30mOhm at 4.5A and 4.5V, with a logic level gate for enhanced control. It is supplied in an 8-TSSOP package, measuring 4.40mm in width, and is available in cut tape packaging. The SI6562DQ-T1-GE3 is suitable for use in power management, consumer electronics, and industrial automation applications. Its configuration includes both N-channel and P-channel FETs, providing versatility in circuit design.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
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