SI6562DQ-T1-E3
MOSFET N/P-CH 20V 8-TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI6562DQ-T1-E3, offers a complementary N-channel and P-channel configuration in a 20V, 1W, 8-TSSOP package. This device features a logic-level gate and a maximum Rds On of 30mOhm at 4.5A and 4.5V. The gate charge (Qg) is specified at 25nC maximum at 4.5V. This surface mount component is supplied in cut tape packaging. Its performance characteristics make it suitable for applications in power management, consumer electronics, and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | - |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 30mOhm @ 4.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 25nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 8-TSSOP |
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