SI6544BDQ-T1-GE3
MOSFET N/P-CH 30V 3.7A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI6544BDQ-T1-GE3 is a TrenchFET® MOSFET array featuring N-channel and P-channel complementary devices in a compact 8-TSSOP package. This component offers a 30V drain-to-source voltage rating and continuous drain current capabilities of 3.7A for the N-channel and 3.8A for the P-channel, both specified at 25°C. The device exhibits a maximum on-resistance of 43mOhm at 3.8A and 10V Vgs. Designed with a logic level gate feature, it operates effectively with lower gate drive voltages. The maximum power dissipation is 830mW, and it is available in a Tape & Reel (TR) package suitable for automated assembly. Key applications for this MOSFET array include power management and switching in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A, 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |