SI6544BDQ-T1-E3
MOSFET N/P-CH 30V 3.7A 8TSSOPManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI6544BDQ-T1-E3 is a TrenchFET® MOSFET array featuring N-channel and P-channel configurations. It offers a drain-source voltage (Vdss) of 30V and continuous drain current (Id) capabilities of 3.7A for the N-channel and 3.8A for the P-channel, both specified at 25°C. With a maximum on-resistance (Rds On) of 43mOhm at 3.8A and 10V Vgs, this component is designed for efficient power switching. The logic level gate feature simplifies drive requirements. The device is housed in an 8-TSSOP package for surface mounting and operates across a temperature range of -55°C to 150°C. Typical applications include power management in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-TSSOP (0.173"", 4.40mm Width) |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 830mW |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A, 3.8A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 43mOhm @ 3.8A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 8-TSSOP |
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