SI5999EDU-T1-GE3
MOSFET 2P-CH 20V 6A PPAK CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI5999EDU-T1-GE3 is a TrenchFET® series 2 P-channel PowerPAK® ChipFET™ Dual MOSFET array. This component offers a continuous drain current of 6A and a drain-to-source voltage of 20V. Designed for surface mounting, it features a low Rds(on) of 59mOhm at 3.5A and 4.5V, coupled with a logic level gate for enhanced driving efficiency. Key parameters include a gate charge of 20nC and input capacitance of 496pF, both specified at 10V. The device has a maximum power dissipation of 10.4W and operates across an industrial temperature range of -55°C to 150°C. This MOSFET array is suitable for applications in automotive and industrial power management systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 10.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 496pF @ 10V |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 3.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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