SI5997DU-T1-GE3
MOSFET 2P-CH 30V 6A PPAK CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI5997DU-T1-GE3, a TrenchFET® series MOSFET, features a dual P-channel configuration within a PowerPAK® ChipFET™ Dual package. This surface-mount device offers a 30V drain-to-source voltage and a continuous drain current capability of 6A at 25°C, with a maximum power dissipation of 10.4W. The device exhibits a low on-resistance of 54mOhm at 3A and 10V, and a logic-level gate ensures compatibility with lower voltage drive signals. Key parameters include a maximum gate charge of 14.5nC at 10V and an input capacitance of 430pF at 15V. Operating across a temperature range of -55°C to 150°C, this MOSFET is suitable for applications in automotive, industrial, and consumer electronics where efficient power switching is required. The component is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 10.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 430pF @ 15V |
| Rds On (Max) @ Id, Vgs | 54mOhm @ 3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 14.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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