SI5980DU-T1-GE3
MOSFET 2N-CH 100V 2.5A CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix's SI5980DU-T1-GE3 is a dual N-channel MOSFET array designed for demanding applications. This device offers a 100V drain-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C, with a maximum power dissipation of 7.8W. Featuring a low on-resistance of 567mOhm at 400mA and 10V (Rds On), it minimizes conduction losses. Key parameters include a maximum gate charge (Qg) of 3.3nC at 10V and an input capacitance (Ciss) of 78pF at 50V. The SI5980DU-T1-GE3 is housed in a PowerPAK® ChipFET™ Dual surface-mount package, supplied in cut tape. This Vishay Siliconix MOSFET is suitable for power management and switching applications across various industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 7.8W |
| Drain to Source Voltage (Vdss) | 100V |
| Current - Continuous Drain (Id) @ 25°C | 2.5A |
| Input Capacitance (Ciss) (Max) @ Vds | 78pF @ 50V |
| Rds On (Max) @ Id, Vgs | 567mOhm @ 400mA, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 3.3nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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