SI5975DC-T1-GE3
MOSFET 2P-CH 12V 3.1A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® MOSFET Array, part number SI5975DC-T1-GE3, is a dual P-channel device designed for high-efficiency power switching applications. This surface-mount component, housed in an 8-SMD, Flat Leads (1206-8 ChipFET™) package, offers a continuous drain current of 3.1A at 25°C with a drain-to-source voltage (Vdss) of 12V. The device features a logic-level gate, with a typical gate charge (Qg) of 9nC at 4.5V and a maximum Rds(On) of 86mOhm at 3.1A and 4.5V. The MOSFET operates within an industrial temperature range of -55°C to 150°C and has a maximum power dissipation of 1.1W. This component is commonly utilized in consumer electronics, industrial control systems, and battery management solutions. It is supplied in Tape & Reel packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 3.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 1mA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |