SI5947DU-T1-GE3
MOSFET 2P-CH 20V 6A PPAK CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI5947DU-T1-GE3, a TrenchFET® series dual P-channel MOSFET, offers a 20V drain-source voltage and 6A continuous drain current at 25°C. This surface-mount component features a low 58mOhm maximum Rds(On) at 3.6A and 4.5V Vgs, enabled by its logic level gate. The device is housed in a PowerPAK® ChipFET™ Dual package, designed for efficient thermal management with a maximum power dissipation of 10.4W. Key electrical parameters include a maximum gate charge of 17nC at 10V and a maximum input capacitance of 480pF at 10V. The operating temperature range is from -55°C to 150°C. This MOSFET array is suitable for applications in power management, battery charging, and load switching within the consumer electronics and industrial sectors. The SI5947DU-T1-GE3 is supplied on tape and reel.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 10.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 480pF @ 10V |
| Rds On (Max) @ Id, Vgs | 58mOhm @ 3.6A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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