SI5944DU-T1-GE3
MOSFET 2N-CH 40V 6A PPAK CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI5944DU-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching applications. This device features a 40V drain-source voltage rating and a continuous drain current capability of 6A at 25°C. With a low Rds(on) of 112mOhm at 3.3A and 10V, it minimizes conduction losses. The logic level gate allows for direct drive from low-voltage microcontrollers. Key parameters include a maximum power dissipation of 10W and a gate charge (Qg) of 6.6nC at 10V. The input capacitance (Ciss) is a maximum of 210pF at 20V. This component is housed in a surface-mount PowerPAK® ChipFET™ Dual package and is supplied on tape and reel. It operates within an industrial temperature range of -55°C to 150°C. This MOSFET array is utilized in automotive and industrial power management solutions.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 10W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 20V |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |