SI5944DU-T1-E3
MOSFET 2N-CH 40V 6A PPAK CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® MOSFET Array, part number SI5944DU-T1-E3, features two N-channel MOSFETs in a PowerPAK® ChipFET™ Dual package. This component offers a 40V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. The device supports logic-level gate drive, with a gate charge (Qg) of 6.6nC maximum at 10V and an input capacitance (Ciss) of 210pF maximum at 20V. On-resistance (Rds On) is specified as 112mOhm maximum at 3.3A and 10V. The MOSFET array is rated for a maximum power dissipation of 10W and operates within an ambient temperature range of -55°C to 150°C. Key applications include power management and switching in automotive and industrial systems. This device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 10W |
| Drain to Source Voltage (Vdss) | 40V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 20V |
| Rds On (Max) @ Id, Vgs | 112mOhm @ 3.3A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 6.6nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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