SI5938DU-T1-E3
MOSFET 2N-CH 20V 6A PPAK CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI5938DU-T1-E3 is a dual N-channel MOSFET array designed for high-efficiency power switching applications. This device features a 20V drain-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C, with a low on-resistance of 39mOhm maximum at 4.4A and 4.5V Vgs. The MOSFET array operates with a logic level gate and has a maximum power dissipation of 8.3W. Key parameters include a gate charge (Qg) of 16nC maximum at 8V and input capacitance (Ciss) of 520pF maximum at 10V. The Vishay Siliconix SI5938DU-T1-E3 is housed in a PowerPAK® ChipFET™ Dual surface mount package and is supplied on tape and reel (TR). This component is suitable for use in automotive and industrial power management systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 8.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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