SI5935DC-T1-E3
MOSFET 2P-CH 20V 3A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI5935DC-T1-E3 is a TrenchFET® series power MOSFET array featuring two P-channel transistors in a 1206-8 ChipFET™ package. This surface mount device offers a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 3A at 25°C. With a maximum Rds(on) of 86mOhm at 3A and 4.5V, and a logic level gate, it provides efficient switching. The device has a gate charge (Qg) of 8.5nC maximum at 4.5V and a power dissipation of 1.1W. Operating across a temperature range of -55°C to 150°C, this MOSFET array is suitable for applications in consumer electronics and industrial automation.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 86mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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