SI5933CDC-T1-GE3
MOSFET 2P-CH 20V 3.7A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI5933CDC-T1-GE3 is a TrenchFET® series 2 P-channel MOSFET array designed for power management applications. This device features a 20V drain-source voltage rating and supports a continuous drain current of 3.7A at 25°C. The Rds(On) is specified at a maximum of 144mOhm when Id is 2.5A and Vgs is 4.5V. Key characteristics include a gate charge (Qg) of 6.8nC (max) at 5V and input capacitance (Ciss) of 276pF (max) at 10V. The Vishay Siliconix SI5933CDC-T1-GE3 is packaged in an 8-SMD, Flat Leads (1206-8 ChipFET™) format for surface mounting and has a maximum power dissipation of 2.8W. It is suitable for operation across an extended temperature range of -55°C to 150°C. This component is commonly utilized in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 2.8W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.7A |
| Input Capacitance (Ciss) (Max) @ Vds | 276pF @ 10V |
| Rds On (Max) @ Id, Vgs | 144mOhm @ 2.5A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6.8nC @ 5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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