SI5922DU-T1-GE3
MOSFET 2N-CH 30V 6A PPAK CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI5922DU-T1-GE3 is a dual N-channel PowerPAK® ChipFet Dual MOSFET array. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C (Tc). The low on-resistance of 19.2mOhm at 5A and 10V (Rds On) coupled with a maximum power dissipation of 10.4W (Tc) makes it suitable for power management applications. Key parameters include a gate charge (Qg) of 7.1nC at 4.5V and input capacitance (Ciss) of 765pF at 15V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in automotive, industrial, and consumer electronics markets. The device is supplied in a PowerPAK® ChipFet Dual package, presented on Tape & Reel (TR).
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 34 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFet Dual |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 10.4W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 765pF @ 15V |
| Rds On (Max) @ Id, Vgs | 19.2mOhm @ 5A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.1nC @ 4.5V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.2V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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