SI5920DC-T1-GE3
MOSFET 2N-CH 8V 4A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® series SI5920DC-T1-GE3 is a dual N-channel MOSFET array designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 8V and a continuous Drain Current (Id) of 4A at 25°C, with a low Rds(On) of 32mOhm at 6.8A and 4.5V. The logic-level gate ensures compatibility with a wider range of driver circuits. With a maximum power dissipation of 3.12W and a compact 1206-8 ChipFET™ package, it is suitable for space-constrained designs. Key parameters include a gate charge (Qg) of 12nC (max) at 5V and input capacitance (Ciss) of 680pF (max) at 4V. The operating temperature range is -55°C to 150°C. This MOSFET array finds application in portable electronics, power management, and automotive systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.12W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 680pF @ 4V |
| Rds On (Max) @ Id, Vgs | 32mOhm @ 6.8A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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