SI5915DC-T1-E3
MOSFET 2P-CH 8V 3.4A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI5915DC-T1-E3 is a dual P-channel Power MOSFET designed for high-efficiency switching applications. This device features a 8V Vdss rating and a continuous drain current capability of 3.4A at 25°C, with a low Rds(on) of 70mOhm at 3.4A and 4.5V Vgs. The TrenchFET® technology enables reduced on-resistance and gate charge, contributing to improved power density and thermal performance. Operating with a logic-level gate drive, the SI5915DC-T1-E3 is suitable for battery-powered portable equipment and power management systems. The 1206-8 ChipFET™ package offers a compact footprint for surface mounting. This component is utilized in consumer electronics, industrial automation, and telecommunications infrastructure.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
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