SI5915BDC-T1-E3
MOSFET 2P-CH 8V 4A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® SI5915BDC-T1-E3 is a dual P-channel MOSFET array designed for demanding applications. This device features a 8V Drain-to-Source Voltage (Vdss) and a continuous Drain Current (Id) of 4A at 25°C. With a low Rds(on) of 70mOhm at 3.3A and 4.5V Vgs, it minimizes conduction losses. The logic-level gate enhances compatibility with lower voltage control signals. Key parameters include a Gate Charge (Qg) of 14nC maximum at 8V and Input Capacitance (Ciss) of 420pF maximum at 4V. The SI5915BDC-T1-E3 is housed in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™ form factor, optimized for surface mounting. It operates across a wide temperature range of -55°C to 150°C (TJ) and supports a maximum power dissipation of 3.1W. This component is suitable for use in power management, battery charging, and portable electronics.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 420pF @ 4V |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 3.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 14nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
