SI5908DC-T1-GE3
MOSFET 2N-CH 20V 4.4A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® Si5908DC-T1-GE3 is a 20V, dual N-channel MOSFET array designed for high-efficiency power switching applications. This device offers a low Rds(on) of 40mOhm maximum at 4.4A and 4.5V Vgs, facilitating minimal conduction losses. Featuring a logic level gate, it is suitable for direct control from microcontroller outputs. The Si5908DC-T1-GE3 boasts a continuous drain current of 4.4A and a maximum power dissipation of 1.1W. Its 1206-8 ChipFET™ package ensures excellent thermal performance for surface mount applications. This MOSFET array is commonly utilized in power management, battery charging, and portable electronics. Operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 8 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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