SI5908DC-T1-E3
MOSFET 2N-CH 20V 4.4A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI5908DC-T1-E3 is a TrenchFET® series 2 N-channel MOSFET array. This device features a 20V drain-source voltage rating and a continuous drain current capability of 4.4A at 25°C. The low on-resistance of 40mOhm at 4.4A and 4.5V Vgs, combined with a logic-level gate, makes it suitable for efficient power switching applications. Key parameters include a gate charge of 7.5nC maximum at 4.5V and a threshold voltage of 1V maximum at 250µA. The component is provided in a 1206-8 ChipFET™ surface mount package, supplied on tape and reel. This MOSFET array is utilized in various industries requiring compact and high-performance power management solutions. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 4.4A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 40mOhm @ 4.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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