SI5905DC-T1-E3
MOSFET 2P-CH 8V 3A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI5905DC-T1-E3 TrenchFET® series power MOSFET is a dual P-channel device designed for efficient power management. This 8V, 3A device features a low Rds(on) of 90mOhm at 3A and 4.5V Vgs, with a logic level gate for compatibility with lower voltage drive signals. The 1206-8 ChipFET™ package offers a 1.1W power dissipation and a surface mount configuration suitable for compact designs. Key electrical characteristics include a gate charge (Qg) of 9nC at 4.5V and a threshold voltage (Vgs(th)) of 450mV at 250µA. Operating temperature range is from -55°C to 150°C. This component is utilized in applications such as battery management, portable electronics, and power switching circuits.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 3A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 90mOhm @ 3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 450mV @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
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