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SI5905BDC-T1-GE3

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SI5905BDC-T1-GE3

MOSFET 2P-CH 8V 4A 1206-8

Manufacturer: Vishay Siliconix

Categories: FET, MOSFET Arrays

Quality Control: Learn More

Vishay Siliconix TrenchFET® SI5905BDC-T1-GE3 is a dual P-channel Power MOSFET array designed for efficient power management. This device features an 8V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C, with a maximum continuous power dissipation of 3.1W. The MOSFET array offers a low on-resistance (Rds On) of 80mOhm at 3.3A and 4.5V, a key parameter for minimizing conduction losses. Engineered with a logic level gate, this component facilitates direct interface with lower voltage control signals. Key electrical characteristics include a gate charge (Qg) of 11nC maximum at 8V and an input capacitance (Ciss) of 350pF maximum at 4V. The SI5905BDC-T1-GE3 is housed in an 8-SMD, Flat Leads package, specifically the 1206-8 ChipFET™ footprint, suitable for surface mounting. It operates across a wide temperature range of -55°C to 150°C. This MOSFET array finds application in areas such as battery management, power switching, and portable electronics. The device is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-SMD, Flat Leads
Mounting TypeSurface Mount
Configuration2 P-Channel (Dual)
Operating Temperature-55°C ~ 150°C (TJ)
TechnologyMOSFET (Metal Oxide)
Power - Max3.1W
Drain to Source Voltage (Vdss)8V
Current - Continuous Drain (Id) @ 25°C4A
Input Capacitance (Ciss) (Max) @ Vds350pF @ 4V
Rds On (Max) @ Id, Vgs80mOhm @ 3.3A, 4.5V
Gate Charge (Qg) (Max) @ Vgs11nC @ 8V
FET FeatureLogic Level Gate
Vgs(th) (Max) @ Id1V @ 250µA
Supplier Device Package1206-8 ChipFET™

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