SI5905BDC-T1-E3
MOSFET 2P-CH 8V 4A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI5905BDC-T1-E3 is a TrenchFET® series power MOSFET featuring two P-channel enhancement mode transistors in a single 1206-8 ChipFET™ package. This device offers a continuous drain current (Id) of 4A at 25°C and a drain-source voltage (Vdss) of 8V. Designed with a logic level gate, it achieves a low on-resistance of 80mOhm maximum at 3.3A and 4.5V. The component exhibits a typical input capacitance (Ciss) of 350pF at 4V and a gate charge (Qg) of 11nC at 8V. Operating across a temperature range of -55°C to 150°C, this surface mount component dissipates a maximum power of 3.1W. It is commonly utilized in power management applications, consumer electronics, and battery-powered devices. The Vishay Siliconix SI5905BDC-T1-E3 is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.1W |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25°C | 4A |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 4V |
| Rds On (Max) @ Id, Vgs | 80mOhm @ 3.3A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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