SI5904DC-T1-GE3
MOSFET 2N-CH 20V 3.1A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix TrenchFET® SI5904DC-T1-GE3 is a dual N-channel MOSFET array designed for efficient power management. This component features a 20V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 3.1A at 25°C. The low on-resistance (Rds On) of 75mOhm at 3.1A and 4.5V Vgs, coupled with a logic level gate, ensures optimized performance in battery-powered applications and power supply designs. With a maximum power dissipation of 1.1W and operating temperature range from -55°C to 150°C, this device is housed in an 8-SMD, Flat Leads 1206-8 ChipFET™ package, supplied on tape and reel. Key electrical characteristics include a maximum gate charge (Qg) of 6nC at 4.5V and a threshold voltage (Vgs(th)) of 1.5V at 250µA. This MOSFET array is utilized across various industries including consumer electronics and industrial control systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 3.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |