SI5903DC-T1-GE3
MOSFET 2P-CH 20V 2.1A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI5903DC-T1-GE3 is a TrenchFET® series dual P-channel MOSFET array designed for efficient power switching. This device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.1A at 25°C. With a maximum on-resistance (Rds On) of 155mOhm at 2.1A and 4.5V Vgs, it offers low conduction losses. The logic level gate ensures compatibility with lower voltage drive signals. The SI5903DC-T1-GE3 is supplied in an 8-SMD, Flat Leads (1206-8 ChipFET™) package, suitable for surface mounting. Typical applications include power management and switching circuits in consumer electronics and industrial automation. Its operating temperature range is -55°C to 150°C.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 P-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 155mOhm @ 2.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 600mV @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |