SI5902DC-T1-E3
MOSFET 2N-CH 30V 2.9A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix TrenchFET® series dual N-channel MOSFET, part number SI5902DC-T1-E3. This surface-mount device features a 30V Vdss rating and 2.9A continuous drain current. With a low Rds(on) of 85mOhm maximum at 2.9A and 10V, this logic-level gate MOSFET is optimized for efficiency. It offers a maximum power dissipation of 1.1W and is supplied in the 1206-8 ChipFET™ package, presented on tape and reel. Key characteristics include a gate charge (Qg) of 7.5nC maximum at 10V and a Vgs(th) of 1V maximum at 250µA. Suitable for applications in consumer electronics, industrial automation, and power management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 1.1W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A |
| Input Capacitance (Ciss) (Max) @ Vds | - |
| Rds On (Max) @ Id, Vgs | 85mOhm @ 2.9A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7.5nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Supplier Device Package | 1206-8 ChipFET™ |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
