SI5902BDC-T1-E3
MOSFET 2N-CH 30V 4A 1206-8Manufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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The Vishay Siliconix SI5902BDC-T1-E3 is a dual N-channel TrenchFET® MOSFET array in a 1206-8 ChipFET™ package. This device features a 30V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Tc). The Rds(on) is specified at a maximum of 65mOhm at 3.1A and 10V Vgs, with a typical gate charge (Qg) of 7nC at 10V. This component utilizes MOSFET technology and offers a logic level gate for enhanced drive flexibility. It is designed for surface mounting and operates within an extended temperature range of -55°C to 150°C (TJ). The maximum power dissipation is 3.12W. This MOSFET array is suitable for applications in power management and general-purpose switching within the automotive and industrial sectors. The device is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-SMD, Flat Leads |
| Mounting Type | Surface Mount |
| Configuration | 2 N-Channel (Dual) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 3.12W |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 220pF @ 15V |
| Rds On (Max) @ Id, Vgs | 65mOhm @ 3.1A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 7nC @ 10V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Supplier Device Package | 1206-8 ChipFET™ |
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