SI5519DU-T1-GE3
MOSFET N/P-CH 20V 6A CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI5519DU-T1-GE3 TrenchFET® series MOSFET array. This dual N-channel and P-channel device features a 20V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 6A at 25°C. The device offers a low on-resistance (Rds On) of 36mOhm maximum at 6.1A and 4.5V gate-source voltage (Vgs). With a maximum power dissipation of 10.4W and a gate charge (Qg) of 17.5nC, the SI5519DU-T1-GE3 is suitable for applications requiring efficient switching. The component is housed in a PowerPAK® ChipFET™ Dual surface-mount package and operates across a temperature range of -55°C to 150°C. Its advanced MOSFET technology and compact footprint make it ideal for power management solutions in automotive and industrial sectors.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 10.4W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 660pF @ 10V |
| Rds On (Max) @ Id, Vgs | 36mOhm @ 6.1A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 17.5nC @ 10V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 1.8V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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