SI5517DU-T1-GE3
MOSFET N/P-CH 20V 6A CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
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Vishay Siliconix SI5517DU-T1-GE3 is a dual N-channel and P-channel MOSFET array designed for efficient power switching applications. This TrenchFET® series component features a 20V drain-source voltage rating and a continuous drain current capability of 6A at 25°C. The device offers a low on-resistance of 39mOhm maximum at 4.4A and 4.5V gate-source voltage, optimizing conduction losses. With a logic level gate drive, it is suitable for operation with lower voltage control signals. The maximum power dissipation is 8.3W. This MOSFET array is housed in a PowerPAK® ChipFET™ Dual surface mount package, supplied on tape and reel. Key electrical parameters include a maximum gate charge of 16nC at 8V and a maximum input capacitance of 520pF at 10V. It operates across a temperature range of -55°C to 150°C. Applications include power management in consumer electronics and industrial systems.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 11 week(s)Product Status: Last Time BuyPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 8.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
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