SI5517DU-T1-E3
MOSFET N/P-CH 20V 6A CHIPFETManufacturer: Vishay Siliconix
Categories: FET, MOSFET Arrays
Quality Control: Learn More
Vishay Siliconix SI5517DU-T1-E3 TrenchFET® MOSFET N/P-CH 20V 6A CHIPFET. This dual-channel device features a 20V drain-source voltage and a continuous drain current of 6A at 25°C. The array offers a maximum power dissipation of 8.3W and a low on-resistance of 39mOhm at 4.4A and 4.5V. Designed with a logic level gate, it has a gate charge of 16nC maximum at 8V and an input capacitance of 520pF maximum at 10V. The device operates across a temperature range of -55°C to 150°C (TJ). It is available in a surface mount PowerPAK® ChipFET™ Dual package, supplied on tape and reel. This component is utilized in applications such as battery management, power switching, and load management.
Additional Information
Series: TrenchFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | PowerPAK® ChipFET™ Dual |
| Mounting Type | Surface Mount |
| Configuration | N and P-Channel |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| Power - Max | 8.3W |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25°C | 6A |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 10V |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 4.4A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 16nC @ 8V |
| FET Feature | Logic Level Gate |
| Vgs(th) (Max) @ Id | 1V @ 250µA |
| Supplier Device Package | PowerPAK® ChipFet Dual |
Request a Quote
Clients Also Buy
SI2365EDS-T1-GE3
MOSFET P-CH 20V 5.9A TO236
SI2302CDS-T1-E3
MOSFET N-CH 20V 2.6A SOT23-3
SIA449DJ-T1-GE3
MOSFET P-CH 30V 12A PPAK SC70-6
